Hydrogen-mediated quenching of strain-induced surface roughening during gas-source molecular beam epitaxy of fully-coherent Si0.7Ge0.3 layers on Si„001..
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چکیده
Hydrogen-mediated quenching of strain-induced surface roughening during gas-source molecular beam epitaxy of fully-coherent Si0.7Ge0.3 layers on Si„001... T. Spila, P. Desjardins, A. Vailionis, H. Kim, N. Taylor, D. G. Cahill, and J. E. Greene Department of Materials Science and the Frederick Seitz Materials Research Laboratory, University of Illinois, 104 South Goodwin Avenue, Urbana, Illinois 61801
منابع مشابه
Local strain relaxation in Si0.7Ge0.3 on Si„001... induced by Ga 1 irradiation
A strained pseudomorphic Si0.7Ge0.3 film grown by gas-source molecular-beam epitaxy on Si~001! was irradiated at room temperature with 25 keV Ga ions. The gradual strain relaxation of the metastable Si0.7Ge0.3 film was monitored using in situ x-ray diffraction as a function of dose. Based on a dimensional argument, the ion-induced damage scales as extended defects. The Hendricks-Teller model wa...
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